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Manufacturer Part #

SI1965DH-T1-GE3

Dual P-Channel 12 V 390 mΩ 1.7 nC Power Mosfet - SOT-363

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2613
Product Specification Section
Vishay SI1965DH-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 0.39Ω
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 1.7nC
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
24,000
USA:
24,000
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$525.00
USD
Quantity
Unit Price
3,000
$0.175
6,000
$0.173
12,000
$0.171
15,000
$0.17
45,000+
$0.166
Product Variant Information section