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Manufacturer Part #

SIR826DP-T1-GE3

SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR826DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 6.25|W
Qg Gate Charge: 60nC
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,080.00
USD
Quantity
Unit Price
3,000+
$1.36
Product Variant Information section