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Infineon | IRLML5203TRPBF

Manufacturer Part #

IRLML5203TRPBF

Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2407
Product Specification Section
Infineon IRLML5203TRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 165mΩ
Rated Power Dissipation: 1.25W
Qg Gate Charge: 14nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 88ns
Rise Time: 18ns
Fall Time: 52ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 1.02mm
Length: 3.04mm
Input Capacitance: 510pF
Package Style:  MICRO-3
Mounting Method: Surface Mount
Features & Applications
The IRLML5203TRPBF is a P-channel MOSFET with Drain- Source Voltage of -30 V, available in a MICRO-3 package.

This device utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

Features:

  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • Surface Mount
  • Available in Tape & Reel
  • Low Gate Charge
  • Lead-Free
  • Halogen-Free

Applications:

  • Battery and load management applications
Pricing Section
Global Stock:
138,000
USA:
138,000
On Order:Order inventroy details
1,026,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$318.00
USD
Quantity
Unit Price
3,000
$0.106
9,000
$0.104
15,000
$0.103
30,000
$0.102
60,000+
$0.10
Product Variant Information section