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Manufacturer Part #

IRFP4332PBF

Single N-Channel 250 V 33 mOhm 150 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRFP4332PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 33mΩ
Rated Power Dissipation: 360W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 57A
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 5V
Technology: Advanced Process Technology
Height - Max: 20.7mm
Length: 15.87mm
Input Capacitance: 5860pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
25
Multiple Of:
25
Total
$139.00
USD
Quantity
Unit Price
25
$5.56
100
$5.51
250
$5.48
625
$5.45
1,000+
$5.40
Product Variant Information section