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onsemi | FCA20N60-F109

Manufacturer Part #

FCA20N60-F109

FCA20N60 Series 600 V 190 mOhm 20 A N-Channel SuperFET® MOSFET - TO-3PN

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Mfr. Name: onsemi
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Product Specification Section
onsemi FCA20N60-F109 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 208W
Qg Gate Charge: 75nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 20A
Turn-on Delay Time: 62ns
Turn-off Delay Time: 230ns
Rise Time: 140ns
Fall Time: 65ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 2370pF
Package Style:  TO-3PN
Mounting Method: Through Hole
Features & Applications

The FCA20N60_F109 is a FCA20N60 Series 600 V 190 Ohm Through Hole N-Channel MOSFET - TO-3PN package .

The SuperFET® is a new generation high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Product Features:

  • 650V @TJ=150°C
  • Typ. Rds(on)=0.15Ω
  • Fast Recovery Type ( trr = 160ns )
  • Ultra low gate charge (typ. Qg=75nC)
  • Low effective output capacitance (typ. Coss.eff=165pF)
  • 100% avalanche tested
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
450
Multiple Of:
450
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Total
$3,964.50
USD
Quantity
Unit Price
3
$9.18
15
$9.08
40
$9.02
150
$8.94
400+
$8.81
Product Variant Information section