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Manufacturer Part #

IRF8734TRPBF

Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
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Product Variant Information section
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Product Specification Section
Infineon IRF8734TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 20nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

         International Rectifier, IR® a world leader in power management technology, introduced a series of new 25V and 30V N-channel trench HEXFET® power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection in computing applications for consumer and networking sectors.

 

          The new family of MOSFETs utilizes IR’s proven silicon technology to deliver benchmark on-state resistance (RDS(on)) and improved switching performance. The devices’ low conduction losses improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.

          The new MOSFETs are also offered in a Power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration.

          Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5x6mm and 3x3mm package optimized for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered as Halogen free.

The IRF8734TRPBF is an N-channel, 30V MOSFET with a current rating of 21 Amps. The device has a max rating of 3.5 Mohms, and is offered in a TO-220 package

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,440.00
USD
Quantity
Unit Price
4,000
$0.36
8,000
$0.355
20,000+
$0.345
Product Variant Information section