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Manufacturer Part #

DMC3025LSD-13

Dual N/P-Channel 30 V 32/85 mOhm 4.6/5.1 nC 1.2 W Silicon SMT Mosfet SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMC3025LSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V/30V
Drain-Source On Resistance-Max: 32mΩ/85mΩ
Rated Power Dissipation: 1.2W
Qg Gate Charge: 4.6nC/5.1nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -3.5A/6.5A
Turn-on Delay Time: 3.9ns/6.8ns
Turn-off Delay Time: 16.6ns/28.4ns
Rise Time: 4.2ns/4.9ns
Fall Time: 5.8ns/12.4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2V/2V
Technology: Si
Height - Max: 1.75mm
Length: 4.95mm
Input Capacitance: 501pF/590pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,225.00
USD
Quantity
Unit Price
2,500
$0.49
5,000
$0.48
10,000
$0.475
12,500+
$0.47
Product Variant Information section