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Manufacturer Part #

IRLZ44NPBF

Single N-Channel 55 V 0.035 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2533
Product Specification Section
Infineon IRLZ44NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.035Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 48nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 47A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 26ns
Rise Time: 84ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Advanced Process Technology
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 1700pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
4,650
USA:
4,650
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$29.00
USD
Quantity
Unit Price
50
$0.58
250
$0.56
1,250
$0.545
2,500
$0.54
7,500+
$0.52
Product Variant Information section