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Infineon | IRF9530NPBF

Manufacturer Part #

IRF9530NPBF

Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2501
Product Specification Section
Infineon IRF9530NPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.2Ω
Rated Power Dissipation: 79W
Qg Gate Charge: 58nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 45ns
Rise Time: 58ns
Fall Time: 46ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 760pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free

The IRF9530NPBF is a Single P-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

Pricing Section
Global Stock:
5,269
USA:
5,269
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
50
Multiple Of:
1
Total
$19.75
USD
Quantity
Unit Price
50
$0.395
200
$0.385
750
$0.375
2,000
$0.37
7,500+
$0.35
Product Variant Information section