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STMicroelectronics | IRF630

Manufacturer Part #

IRF630

Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2328
Product Specification Section
STMicroelectronics IRF630 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 75|W
Qg Gate Charge: 31nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The IRF630 power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

Features:

  • Extremely high dv/dt capability
  • Very low intrinsic capacitances
  • Gate charge minimized

Applications:

  • Switching application
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$21.25
USD
Quantity
Unit Price
50
$0.425
200
$0.415
750
$0.405
2,000
$0.40
7,500+
$0.38
Product Variant Information section