onsemi | SS16T3G

The SS16T3G devices employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.

Key Features:

• Small Compact Surface Mountable Package with J-Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• Pb-Free Package is Available

Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V-0
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings:
• Machine Model = C
• Human Body Model = 3B
• Device Meets MSL 1 Requirements