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onsemi | 2N5190G

Manufacturer Part #

2N5190G

2N5190G Series 40 V 4 A Through Hole Silicon NPN Power Transistor - TO-225

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi 2N5190G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 40V
Collector Current Max: 4A
Power Dissipation-Tot: 40W
Collector - Base Voltage: 40V
Collector - Emitter Saturation Voltage: 1.4V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 10
Collector - Current Cutoff: 0.1mA
Configuration: Single
Frequency - Transition: 2MHz
Operating Temp Range: -65°C to +150°C
Package Style:  TO-225 (TO-126, SOT-32)
Mounting Method: Through Hole
Features & Applications

The 2N5190G is a NPN silicon power transistor with power dissipation of 40 W, available in a TO−225AA package.

Features:

  • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V
  • Epoxy Meets UL 94 V−0 @ 0.125 in.
  • Pb−Free Packages are Available

Applications:

  • Switching Circuits
  • Power Amplifier

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
4,000
Factory Lead Time:
8 Weeks
Minimum Order:
2000
Multiple Of:
500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$690.00
USD
Quantity
Unit Price
50
$0.37
150
$0.36
400
$0.355
1,000
$0.345
2,500+
$0.33
Product Variant Information section