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onsemi | NTJD1155LT1G

Manufacturer Part #

NTJD1155LT1G

P-Channel 8 V 130 mOhm 400 mW Surface Mount Power MOSFET - SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2602
Product Specification Section
onsemi NTJD1155LT1G - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 8V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 0.4|W
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications
The NTJD1155LT1G is a part of NTJD1155L series P-channel power MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology.

Features:

  • Extremely Low RDS(on) P−Channel Load Switch MOSFET
  • Level Shift MOSFET is ESD Protected
  • Low Profile, Small Footprint Package
  • VIN Range 1.8 to 8.0 V
  • ON/OFF Range 1.5 to 8.0 V
  • ESD Rating of 3000 V
  • Pb−Free Package is Available

Applications:

  • Integrated High Side Load Switch with built in Level Shift
  • Portable Equipment including Cell Phones, Digital Cameras, PDAs, Media Players, and Games
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
51,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
12000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,296.00
USD
Quantity
Unit Price
3,000
$0.11
9,000
$0.108
15,000
$0.107
30,000
$0.106
60,000+
$0.104
Product Variant Information section