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Product Specification Section
onsemi MMBT6429LT1G - Technical Attributes
Attributes Table
Polarity: NPN
CE Voltage-Max: 45V
Collector Current Max: 200mA
Power Dissipation-Tot: 225mW
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The MMBT6429LT1G is a part of MMBT6429L series NPN amplifier transistor. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-23 package.

This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Features:

  • Collector −Emitter Voltage: 45 Vdc
  • Collector −Base Voltage: 55 Vdc
  • Emitter−Base Voltage: 6 Vdc
  • Collector Current − Continuous: 200 mADC
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Pricing Section
Global Stock:
24,000
USA:
24,000
210,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$70.80
USD
Quantity
Unit Price
3,000
$0.0236
9,000
$0.0231
15,000
$0.0228
30,000
$0.0224
60,000+
$0.0219