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onsemi | FCP850N80Z

Manufacturer Part #

FCP850N80Z

MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FCP850N80Z - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 850mΩ
Rated Power Dissipation: 136W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: ±30V
Drain Current: 8A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Height - Max: 4.7mm
Length: 15.42mm
Input Capacitance: 1315pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
29 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$2,792.00
USD
Quantity
Unit Price
800
$3.49
1,600+
$3.44
Product Variant Information section