text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Digital Transistors
  6. MUN5214DW1T1G

onsemi | MUN5214DW1T1G

Manufacturer Part #

MUN5214DW1T1G

MUN Series 50 V 100 mA 10 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2619
Product Specification Section
onsemi MUN5214DW1T1G - Technical Attributes
Attributes Table
Polarity: NPN
R1, R2: 10kΩ
Output Current-Max: 100mA
Supply Voltage: 50|V
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications
The MUN5214DW1T1G is a part of MUN series NPN silicon dual bias resistor transistor. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.

The Dual NPN Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual NPN Bipolar Digital Transistor eliminates these individual components by integrating them into a single device.

Features:

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7 inch/3000 Unit Tape and Reel
  • Pb-Free Packages are Available
  • AEC-Q101 Qualified and PPAP Capable
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
33000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$933.90
USD
Quantity
Unit Price
3,000
$0.0299
9,000
$0.0291
12,000
$0.0289
30,000
$0.0283
45,000+
$0.0277
Product Variant Information section