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onsemi | 2N7000-D26Z

Manufacturer Part #

2N7000-D26Z

2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
onsemi 2N7000-D26Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5Ω
Rated Power Dissipation: 400mW
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 200mA
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 20pF
Package Style:  TO-92
Mounting Method: Through Hole
Features & Applications

The 2N7000_D26Z is a part of 2N70 series field effect transistor. It has an operating temperature ranging from -55°C to +150°C and its available in TO-92-3 package.

Features:

  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • Drain-Source Voltage: 60 V
  • VDGR Drain-Gate Voltage: 60 V

Applications:

  • Automation
  • Broadband Access
  • Home Audio System Components
  • Mobile Comm Infrastructure
  • Test and Measurement
Pricing Section
Global Stock:
38,000
USA:
38,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$173.80
USD
Quantity
Unit Price
2,000
$0.0869
4,000
$0.0854
6,000
$0.0845
10,000
$0.0834
20,000+
$0.0811
Product Variant Information section