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Infineon Technologies | BSC026NE2LS5ATMA1

Manufacturer Part #

BSC026NE2LS5ATMA1

BSC026xx Series 25 V 82 A 2.6 mOhm N-Ch OptiMOS™ Power-MOSFET - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSC026NE2LS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 24A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 13ns
Rise Time: 3ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 780pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$4,575.00
USD
Quantity
Unit Price
5,000+
$0.915
Product Variant Information section