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Infineon Technologies | BSC0902NSATMA1

Manufacturer Part #

BSC0902NSATMA1

Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies BSC0902NSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 26nC
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$4,925.00
USD
Quantity
Unit Price
5,000+
$0.985
Product Variant Information section