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Manufacturer Part #

DMG1024UV-7

Dual N-Channel 20 V 530 mW 736.6 pC Silicon Surface Mount Mosfet - SOT-563

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMG1024UV-7 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 10Ω
Rated Power Dissipation: 530mW
Qg Gate Charge: 736.6pC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: 1.38A
Turn-on Delay Time: 5.1ns
Turn-off Delay Time: 26.7ns
Rise Time: 7.4ns
Fall Time: 12.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.6mm
Length: 1.7mm
Input Capacitance: 60.67pF
Package Style:  SOT-563
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$930.00
USD
Quantity
Unit Price
3,000
$0.31
9,000
$0.305
15,000+
$0.30
Product Variant Information section