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Diodes Incorporated | DMN1008UFDF-7

Manufacturer Part #

DMN1008UFDF-7

DMN1008UFDF Series 12 V 12.2 A N-Channel Enhancement Mode Mosfet - U-DFN2020-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2619
Product Specification Section
Diodes Incorporated DMN1008UFDF-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 700mW
Qg Gate Charge: 23.4nC
Gate-Source Voltage-Max [Vgss]: ±8V
Drain Current: 12.2A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 17.5ns
Rise Time: 6.6ns
Fall Time: 7.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Height - Max: 0.63mm
Length: 2mm
Input Capacitance: 995pF
Package Style:  U-DFN2020-6
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,275.00
USD
Quantity
Unit Price
3,000
$0.425
6,000
$0.42
12,000
$0.415
15,000+
$0.41
Product Variant Information section