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Diodes Incorporated | DMN1150UFB-7B

Manufacturer Part #

DMN1150UFB-7B

Single N-Channel 12 V 210 mOhm 1.5 nC 0.5 W Silicon SMT Mosfet - UFDFN-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN1150UFB-7B - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 210mΩ
Rated Power Dissipation: 0.5W
Qg Gate Charge: 1.5nC
Gate-Source Voltage-Max [Vgss]: 6V
Drain Current: 1.41A
Turn-on Delay Time: 4.1ns
Turn-off Delay Time: 57ns
Rise Time: 34.5ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 0.53mm
Length: 1.075mm
Input Capacitance: 106pF
Package Style:  UFDFN-3
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,090.00
USD
Quantity
Unit Price
10,000
$0.109
20,000
$0.108
30,000
$0.107
50,000+
$0.105
Product Variant Information section