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Diodes Incorporated | DMT6008LFG-7

Manufacturer Part #

DMT6008LFG-7

DMT6008LFG Series 60 V 13 A N-Channel Enhancement Mode Mosfet - PWDI3333-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMT6008LFG-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 2.2W
Qg Gate Charge: 50.4nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 13A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 24.4ns
Rise Time: 4.4ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Input Capacitance: 2713pF
Package Style:  POWERDI3333-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
96,000
Factory Lead Time:
40 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,340.00
USD
Quantity
Unit Price
2,000
$1.17
4,000+
$1.16
Product Variant Information section