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Diodes Incorporated | DMT6010LSS-13

Manufacturer Part #

DMT6010LSS-13

DMT6010LSS Series 60 V 14 A N-Channel Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMT6010LSS-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 1.5|W
Qg Gate Charge: 41.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 23.4ns
Rise Time: 4.3ns
Fall Time: 9.7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Height - Max: 1.5mm
Length: 4.95mm
Input Capacitance: 2090pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$3,350.00
USD
Quantity
Unit Price
2,500
$1.34
5,000+
$1.32
Product Variant Information section