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onsemi | FCD850N80Z

Manufacturer Part #

FCD850N80Z

MOSFET N-CH 800V 6A DPAK

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FCD850N80Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 850mΩ
Rated Power Dissipation: 75|W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 990pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$7,425.00
USD
Quantity
Unit Price
2,500+
$2.97
Product Variant Information section