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onsemi | FCH47N60F-F133

Manufacturer Part #

FCH47N60F-F133

MOSFET 600V N-Channel MOSFET

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2532
Product Specification Section
onsemi FCH47N60F-F133 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 73mΩ
Rated Power Dissipation: 417W
Qg Gate Charge: 210nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 47A
Turn-on Delay Time: 185ns
Turn-off Delay Time: 520ns
Rise Time: 210ns
Fall Time: 75ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 5900pF
Series: SUPERFET
Package Style:  TO-247-3
Mounting Method: Through Hole
Features & Applications

The FCH47N60F_F133 is apart of FCH47N60 Series 600 V 0.07 Ω N-Channel SuperFET new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.

Features:

  • 650 V @TJ = 150°C
  • Typ. Rds(on)=0.058 Ω
  • Ultra low gate charge (typ. Qg=210nC)
  • Low effective output capacitance (typ. Coss.eff=420 pF)
  • 100% avalanche tested
  • RoHS Compliant

Applications:

  • Industrial
  • Automotive
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,928.50
USD
Quantity
Unit Price
450+
$8.73
Product Variant Information section