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onsemi | FDB047N10

Manufacturer Part #

FDB047N10

N-Channel 100 V 4.7 mohm Surface Mount PowerTrench Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDB047N10 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.7mΩ
Rated Power Dissipation: 375|W
Qg Gate Charge: 210nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FDB047N10 is a 100 V 4.7 mOhms N-Channel PowerTrench Mosfet - D2PAK-3 package .

Product Features:

  • RDS(on) = 3.9mΩ ( Typ.) @ VGS = 10V, ID = 75A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handing capability
  • RoHS compliant

Applications:

  • DC to DC converters / Synchronous Rectification
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,552.00
USD
Quantity
Unit Price
800
$3.19
1,600
$3.16
2,400+
$3.14
Product Variant Information section