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onsemi | FDC2612

Manufacturer Part #

FDC2612

N-Channel 200 V 725 mohm PowerTrench Mosfet SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
onsemi FDC2612 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 725mΩ
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 8nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC2612 is a N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Its available in SSOT-6 Package

It has been optimized for low gate charge, low RDS(ON) and fast switching speed

Product Features :

  • 1.1 A, 200V
  • RDS(on) = 725 mΩ@ VGS = 10 V
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Fast switching speed
  • Low gate charge (8nC typical)

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • Wireless LAN Access
  • Mobile Comm Infrastructure
  • Notebook PC
  • Medical Electronics/Devices
  • Wireless LAN Access Point/Router
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,085.00
USD
Quantity
Unit Price
3,000
$0.695
6,000
$0.685
9,000+
$0.675
Product Variant Information section