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onsemi | FDI150N10

Manufacturer Part #

FDI150N10

100V, 57A, 16mΩ N-ch I2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDI150N10 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 110W
Qg Gate Charge: 53nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 57A
Turn-on Delay Time: 47ns
Turn-off Delay Time: 86ns
Rise Time: 164ns
Fall Time: 83ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: PowerTrench
Input Capacitance: 3580pF
Package Style:  I2PAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
34 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,176.00
USD
Quantity
Unit Price
800
$1.47
1,600
$1.46
2,400
$1.45
4,000+
$1.44
Product Variant Information section