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onsemi | FDP5800

Manufacturer Part #

FDP5800

N-Channel 60 V 6 mOhm Logic Level PowerTrench® Mosfet - TO-220

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDP5800 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 6mΩ
Rated Power Dissipation: 242|W
Qg Gate Charge: 145nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FDP5800 is a N-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction

Features:

  • RDS(on) = 4.6 m? (Typ.), VGS = 10 V, ID = 80 A
  • High performance trench technology for extermly low Rdson
  • Low gate Charge
  • High power and current handing capability
  • RoHs Compliant

Applications:

  • Motor/ Body Load Control
  • Power Train Management
  • Injection Systems
  • DC-AC Converters and UPS
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
41 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,408.00
USD
Quantity
Unit Price
800
$3.01
1,600
$2.99
2,400+
$2.97
Product Variant Information section