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onsemi | FDS2572

Manufacturer Part #

FDS2572

N-Channel 150 V 47 mOhm UltraFET Trench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS2572 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 0.047Ω
Rated Power Dissipation: 2.5|W
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS2572 is a 150 V 47 mΩ UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters

Features:

  • RDS(ON) = 0.040 Ω (Typ.), V GS = 10 V
  • Qg(TOT) = 29nC (Typ.), VGS = 10 V
  • Low QRR Body Diode
  • Maximized efficiency at high frequencies
  • UIS Rated

Applications:

  • DC/DC converters
  • Telecom and Data-Com Distributed Power Architectures
  • 48-volt I/P Half-Bridge/Full-Bridge
  • 24-volt Forward and Push-Pull topologies
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
97,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
45 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,825.00
USD
Quantity
Unit Price
2,500+
$1.93
Product Variant Information section