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onsemi | FDS3692

Manufacturer Part #

FDS3692

N-Channel 100 V 60 mOhm PowerTrench Mosfet SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDS3692 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 11nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS3692 is a 100 V 60 mΩ Discrete Commercial N-Channel UltraFET Trench MOSFET with SOIC-8 Package

Features:

  • rDS(ON) = 50 mΩ (Typ.), VGS = 10 V, ID = 4.5 A
  • Qg(tot) = 11nC (Typ.), VGS = 10 V
  • Low Miller Charge
  • Low QRR Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive Pulse)

Applications:

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24 V and 48 V Systems
  • High Voltage Synchronous Rectifier
  • Direct Injection / Diesel Injection Systems
  • 42 V Automotive Load Control
  • Electronic Valve Train Systems
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
45 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,437.50
USD
Quantity
Unit Price
2,500
$0.575
5,000
$0.57
7,500
$0.565
10,000
$0.56
12,500+
$0.55
Product Variant Information section