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onsemi | FDS4935BZ

Manufacturer Part #

FDS4935BZ

Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDS4935BZ - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 1.6W
Qg Gate Charge: 40nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 6.9A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 68ns
Rise Time: 23ns
Fall Time: 61ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 1360pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS4935BZ 30 V 22 mΩ Dual P-Channel MOSFET is a rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 V).

Features:

  • -7 A, -30 V
  • RDS(ON) = 23 mΩ @ VGS = -10 V
  • RDS(ON) = 35 mΩ @ VGS = -4.5 V
  • Low gate charge (15nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • Inverter
  • Power Supplies
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
2500
Multiple Of:
2500
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Total
$1,450.00
USD
Quantity
Unit Price
2,500
$0.58
5,000
$0.57
7,500
$0.565
12,500+
$0.555
Product Variant Information section