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onsemi | FDS6680A

Manufacturer Part #

FDS6680A

N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDS6680A - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 9.5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12.5A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 43ns
Rise Time: 10ns
Fall Time: 27ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: PowerTrench
Input Capacitance: 1620F
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS6680A is a 30 V 9.5 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features:

  • 12.5 A, 30 V
  • RDS(ON) = 9.5 mΩ @ VGS = 10 V
  • RDS(ON) = 13 mΩ @ VGS = 4.5 V
  • Ultra-low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications:

  • Low voltage
  • Battery powered applications
  • Medical Electronics/Devices
  • Military & Civil Aerospace
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,275.00
USD
Quantity
Unit Price
2,500
$0.51
5,000
$0.505
7,500
$0.50
12,500+
$0.49
Product Variant Information section