onsemi | FDV301N

The FDV301N is a 25 V 5 Ω N-Channel logic level enhancement mode field effect transistor is produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values

Features:

• 25 V, 0.22 A continuous, 0.5 A Peak.
• RDS(ON) = 5 Ω @ VGS= 2.7 V,
• RDS(ON) = 4 Ω @ VGS= 4.5 V.
• Very low level gate drive requirements
• Operates in 3 V circuits. VGS(th) 1.5 V.
• Gate-Source Zener for ESD ruggedness.
• 6 kV Human Body Model.
• Replace multiple NPN digital transistors with one DMOS FET.

Applications:

• Load switch
• DC/DC converter
• Motor drives