Name: onsemi FDV303N
Brand: onsemi
SKU: 1284389
Price: 0.0367 USD
Availability: InStock

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Image for illustration purposes only,
refer to technical specifications

Manufacturer Part #

FDV303N

N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3

FDV303N Datasheet
ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model.
Mfr. Name:	onsemi
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 3000 per Reel Package Style: SOT-23 (SC-59,TO-236) Mounting Method: Surface Mount
Date Code:	2446

onsemi FDV303N - Technical Attributes

Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	25V
Drain-Source On Resistance-Max:	0.45Ω
Rated Power Dissipation:	0.35\|W
Qg Gate Charge:	2.3nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

Features & Applications

The FDV303N is a 25 V 0.45 O N-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions

Features:

25 V, 0.68 A continuous, 2 A Peak.
RDS(ON) = 0.45 O @ VGS = 4.5 V
RDS(ON) = 0.6 O @ VGS= 2.7 V.
Low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.5 V.
Gate-Source Zener for ESD ruggedness. 6 kV Human Body Model.
Compact industry standard SOT-23 surface mount package.
Alternative to TN0200T and TN0201T

Applications:

Battery circuits
Inverter
compact portable electronic devices

View the complete family of N-channel mosfets