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onsemi | FQB47P06TM-AM002

Manufacturer Part #

FQB47P06TM-AM002

FQB47P06 Series -60 V -47 A 0.026 Ohm SMT P-Channel QFET Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
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Product Specification Section
onsemi FQB47P06TM-AM002 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 26mΩ
Rated Power Dissipation: 3.75W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 47A
Turn-on Delay Time: 50ns
Turn-off Delay Time: 100ns
Rise Time: 450ns
Fall Time: 195ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 2800pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB47P06TM_AM002 is a 60 V 0.026 Ω P-Channel enhancement mode power field effect transistors are produced using DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes

Features:

  • 47 A, -60 V
  • RDS(on) = 0.026 Ω @VGS = -10 V
  • Low gate charge ( typical 84 nC)
  • Low Crss ( typical 320 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • RoHS Compliant

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply
  • Motor control
  • Audio amplifier

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$1,640.00
USD
Quantity
Unit Price
800
$2.05
1,600
$2.03
2,400
$2.02
4,000+
$2.00
Product Variant Information section