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onsemi | FQB55N10TM

Manufacturer Part #

FQB55N10TM

N-Channel 100 V 0.026 Ohm Surface Mount Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2631
Product Specification Section
onsemi FQB55N10TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.026Ω
Rated Power Dissipation: 3.75|W
Qg Gate Charge: 98nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FQB55N10TM is a 100 V 0.026 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • 55 A, 10 0V
  • R DS(on) = 0.026 Ω @V GS = 10 V
  • Low gate charge ( typical 75 nC)
  • Low Crss ( typical 130 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175ºC maximum junction temperature rating
  • RoHS Compliant 

Applications:

  • High efficiency switching DC/DC converters
  • Switch mode power supply,
  • Motor control
  • Audio amplifier

 

 

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
51 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$2,232.00
USD
Quantity
Unit Price
800
$2.79
1,600
$2.76
2,400+
$2.74
Product Variant Information section