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Infineon Technologies | IPD80R1K4CEATMA1

Manufacturer Part #

IPD80R1K4CEATMA1

Single N-Channel 800 V 1.4 Ohm 23 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IPD80R1K4CEATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 63W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3.9A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 72ns
Rise Time: 15ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.9V
Technology: Si
Height - Max: 2.41mm
Length: 6.73mm
Input Capacitance: 570pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$3,700.00
USD
Quantity
Unit Price
2,500+
$1.48
Product Variant Information section