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Infineon Technologies | IPN60R1K5CEATMA1

Manufacturer Part #

IPN60R1K5CEATMA1

Single N-Channel 600 V 1.5 Ohm 9.4 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IPN60R1K5CEATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.5Ω
Rated Power Dissipation: 5W
Qg Gate Charge: 9.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 40ns
Rise Time: 7ns
Fall Time: 20ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 200pF
Series: CoolMOS CE
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,440.00
USD
Quantity
Unit Price
3,000
$0.48
6,000
$0.475
9,000
$0.47
15,000+
$0.46
Product Variant Information section