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Infineon Technologies | IRF1010NSTRLPBF

Manufacturer Part #

IRF1010NSTRLPBF

Single N-Channel 55V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF1010NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 180W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 85A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 39ns
Rise Time: 76ns
Fall Time: 48ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 3210pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$680.00
USD
Quantity
Unit Price
800
$0.85
1,600
$0.84
2,400
$0.83
4,000
$0.825
8,000+
$0.805
Product Variant Information section