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Infineon Technologies | IRF3205ZPBF

Manufacturer Part #

IRF3205ZPBF

Single N-Channel 55 V 6.5 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

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Mfr. Name: Infineon Technologies
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Product Variant Information section
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Product Specification Section
Infineon Technologies IRF3205ZPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 6.5mΩ
Rated Power Dissipation: 170W
Qg Gate Charge: 76nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 110A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 45ns
Rise Time: 95ns
Fall Time: 67ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 3450pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

The IRF3205ZPBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
1
Total
$615.00
USD
Quantity
Unit Price
30
$0.645
125
$0.625
400
$0.615
1,500
$0.60
5,000+
$0.57
Product Variant Information section