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Manufacturer Part #

IRF3805STRLPBF

Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2245
Product Specification Section
Infineon IRF3805STRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 290nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 210A
Turn-on Delay Time: 150ns
Turn-off Delay Time: 93ns
Rise Time: 20ns
Fall Time: 87ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 7960pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,816.00
USD
Quantity
Unit Price
800
$2.27
1,600
$2.26
2,400
$2.25
3,200
$2.24
4,000+
$2.22
Product Variant Information section