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Infineon | IRF5210STRLPBF

Manufacturer Part #

IRF5210STRLPBF

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF5210STRLPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 180nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,128.00
USD
Quantity
Unit Price
800
$1.41
1,600
$1.40
3,200
$1.39
4,000+
$1.38
Product Variant Information section