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Manufacturer Part #

IRF5210STRLPBF

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF5210STRLPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 180nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
132,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,424.00
USD
Quantity
Web Price
800+
$5.53
Product Variant Information section