text.skipToContent text.skipToNavigation

Promotion Icon Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF6613TRPBF

Infineon Technologies | IRF6613TRPBF

Manufacturer Part #

IRF6613TRPBF

Single N-Channel 40 V 3.4 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF6613TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.4mΩ
Rated Power Dissipation: 2.8|W
Qg Gate Charge: 42nC
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Features & Applications
The IRF6613TRPBF is a Single N-Channel Hexfet Power Mosfet, available in surface mount DIRECTFET package.

It combines the latest HEXFET ®Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product.

Features:

  • RoHS Compliant 
  • Lead-Free (Qualified up to 260°C Reflow)
  • Application Specific MOSFETs
  • Low Conduction Losses
  • High Cdv/dt Immunity
  • Low Profile (<0.7mm)
  • Dual Sided Cooling Compatible 
  • Compatible with existing Surface Mount Techniques

Applications:

  • Ideal for CPU Core DC-DC Converters
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$4,296.00
USD
Quantity
Unit Price
4,800+
$0.895
Product Variant Information section