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Infineon Technologies | IRF7316TRPBF

Manufacturer Part #

IRF7316TRPBF

Dual P-Channel 30 V 0.098 Ohm 34 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRF7316TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 0.098Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -4.9A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 51ns
Rise Time: 20ns
Fall Time: 48ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1V
Technology: Generation V
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 710pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,040.00
USD
Quantity
Unit Price
4,000
$0.26
12,000
$0.255
20,000+
$0.25
Product Variant Information section