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Infineon Technologies | IRF7495TRPBF

Manufacturer Part #

IRF7495TRPBF

Single N-Channel 100 V 22 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IRF7495TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.3A
Turn-on Delay Time: 8.7ns
Turn-off Delay Time: 10ns
Rise Time: 13ns
Fall Time: 36ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1530pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IRF7495TRPBF is a Single N-Channel 100 V 2.5 W 34nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • High frequency DC-DC converters
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,880.00
USD
Quantity
Unit Price
4,000
$0.47
8,000
$0.465
12,000
$0.46
16,000+
$0.455
Product Variant Information section