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Infineon Technologies | IRF9358TRPBF

Manufacturer Part #

IRF9358TRPBF

Dual P-Channel 30 V 23.8 mOhm 19 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon Technologies IRF9358TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 16.3mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9.2A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 146ns
Rise Time: 7.2ns
Fall Time: 69ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Technology: Si
Input Capacitance: 1740pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
4000
Multiple Of:
4000
Total
$1,620.00
USD
Quantity
Unit Price
4,000
$0.405
8,000
$0.40
20,000+
$0.39
Product Variant Information section