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Infineon Technologies | IRFB7730PBF

Manufacturer Part #

IRFB7730PBF

Single N-Channel 75 V 2.6 mOhm 407 nC HEXFET® Power Mosfet TO-220-3

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRFB7730PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 407nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 246A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 180ns
Rise Time: 120ns
Fall Time: 115ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.7V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 13660pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,540.00
USD
Quantity
Unit Price
50
$1.59
200
$1.56
750
$1.54
1,500
$1.53
3,750+
$1.51
Product Variant Information section