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Manufacturer Part #

IRFH4253DTRPBF

Dual N-Channel 25 V 3.2/1.1 mOhm 10/31 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

ECAD Model:
Mfr. Name: Infineon Technologies
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon Technologies IRFH4253DTRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 3.2mΩ/1.1mΩ
Qg Gate Charge: 10nC/31nC
Package Style:  PQFN 5 x 6 mm
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$4,240.00
USD
Quantity
Unit Price
4,000+
$1.06
Product Variant Information section